Design and Comparison of SiC MOSFET inverter for Underwater High-Power and High-Speed Motor
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摘要: 随着“深远海”及高机动性、隐蔽性应用目标的提出, 未来水下航行器动力系统需具备更高的转速、功率密度和效率。文中针对传统Si基功率器件在水下高速大功率电机应用中, 由于开关性能限制, 存在电机换相周期内斩波次数不够, 给电机带来较大的转矩脉动和损耗的问题, 首先对功率器件损耗进行分析, 在PSpice中建立仿真模型, 对比了不同开关频率及温度下SiC金氧半场效晶体管(MOSFET)和绝缘栅双极晶体管(IGBT)损耗, 并在Simulink中对比了不同开关频率下电机转矩脉动。利用SiC功率器件开关频率高、开关损耗低等优点, 将SiC MOSFET应用于水下航行器大功率高速电机逆变器模块, 对软硬件进行设计, 并与IGBT逆变器进行效率对比, 同时分析了SiC MOSFET在高频下对电机转矩脉动的影响, 为SiC MOSFET在水下航行器中应用提供有益借鉴。
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关键词:
- 水下航行器 /
- SiC金氧半场效晶体管 /
- 逆变器
Abstract: The proposal of deep and high sea and the application target of high maneuverability and concealment means that the future power system of underwater vehicles should have higher speed, power density, and efficiency. In the application of underwater high-speed and high-power motors, traditional Si-based power devices face the limitation of switching performance, and there are insufficient chopping times in the commutation cycle of the motor, which brings large torque ripple and loss to the motor. Therefore, in this paper, the power device loss was analyzed first. A simulation model was established in PSpice to compare the loss of SiC metal-oxide-semiconductor field-effect transistor(MOSFET) and insulated gate bipolar transistor(IGBT) at different switching frequencies and temperatures, and the motor torque ripple at different switching frequencies was compared in Simulink. The SiC power device had the advantages of high switching frequency and low switching loss, and then the SiC MOSFET was applied to the high-power and high-speed motor inverter module of underwater vehicles. The software and hardware of the inverter module were designed and compared with the IGBT inverter in terms of efficiency. At the same time, the influence of SiC MOSFET on the motor torque ripple at high frequency was analyzed, which provides a useful reference for SiC MOSFET application in underwater vehicles. -
图 3 开关频率12.5 kHz相电流仿真
Figure 3. Phase current simulation of 12.5 kHz switching frequency
图 5 不同开关频率下开关损耗随时间变化仿真
Figure 5. Simulation of switching loss changing with time at different switching frequencies
图 6 不同温度下开关损耗随时间变化仿真
Figure 6. Simulation of switching loss changing with time at different temperatures
图 28 开关频率12.5 kHz时相电流波形
Figure 28. Phase current waveform at a switching frequency of 12.5 kHz
图 29 开关频率30 kHz时相电流波形
Figure 29. Phase current waveform at a switching frequency of 30 kHz
表 1 驱动板参数
Table 1. Drive plate parameters
驱动板型号 单路输出
功率/W最大驱动
频率/kHz峰值驱动
电流/A2FSD0420-EDC 4 60 −15/20 ED0438E 5 20 27 
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表 2 HVTR2812S/HB电源模块参数
Table 2. Power module parameters of HVTR2812S/HB
输入电压/V 输出电压/V 输出功率/W 纹波
/mV效率/% 工作频率/kHz 输出电压
精度/%15~50 12 40 50 87 400 1
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表 3 SiC MOSFET逆变器电机功率及效率数据
Table 3. SiC MOSFET inverter motor power and efficiency data
输入电压
/V输入电流
/A输入功率
/kW输出功率
/kW效率
/%373.7 228.9 81.8 78.3 96 374.5 231.5 81.9 78.7 96 374.7 232.0 83.2 78.8 95 375.3 232.0 83.3 79.2 95 375.4 232.5 83.5 79.4 95 375.4 236.3 83.5 80 96 375.4 236.3 85.0 80.6 95
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表 4 IGBT逆变器电机功率及效率数据
Table 4. IGBT inverter motor power and efficiency data
输入电压
/V输入电流
/A输入功率
/kW输出功率
/kW效率
/%370.4 223.3 73.4 67.8 92 372.7 232.9 83.1 75.6 91 372.9 231.3 82.5 75.9 92 372.5 227.6 80.8 74.6 92 372.9 227.6 81.1 74.7 92 374.2 238.9 85.7 75.4 91 374.2 238.7 85.6 77.4 90
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